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| e PTB 20007 30 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 30 Watts, 935-960 MHz Class AB Characteristics 50% Collector Efficiency at 30 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 60 Output Power (Watts) 50 40 30 20 10 0 0 2 4 6 8 10 200 07 LOT CO DE VCC = 24 V ICQ = 200 mA f = 960 MHz Input Power (Watts) Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 10 175 1.0 -40 to +150 1.0 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20007 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 24 Vdc, Pout = 30 W, ICQ = 200 mA, f = 935 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 30 W, ICQ = 200 mA, f = 935 MHz) Intermodulation Distortion (VCC = 24 Vdc, Pout = 30 W(PEP), ICQ = 200 mA, f1 = 935 MHz, f2 = 936 MHz) Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 30 W, ICQ = 200 mA f = 935 MHz--all phase angles at frequency of test) Symbol Gpe C IMD Min 9.0 50 -- Typ 10.0 -- -33 Max -- -- -- Units dB % dBc -- -- 10:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 24 Vdc, Pout = 30 W, ICQ = 200 mA) Z Source Z Load Frequency MHz 935 960 R 5.2 4.8 Z Source jX -2.5 -2.0 R 4.8 2.1 Z Load jX -3.6 -2.8 2 5/19/98 e Typical Performance Gain & Efficiency vs. Frequency 12 11 PTB 20007 (as measured in a broadband circuit) 80 70 Gain (dB) 9 8 7 6 920 Efficiency (%) 50 VCC = 24 V ICQ = 200 mA Pout = 30 W 930 940 950 960 40 30 20 970 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1994 EUS/KR 1301-PTB 20007 Uen Rev. D 09-28-98 3 5/19/98 Efficiency (%) Gain (dB) 10 60 |
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